Q\ A crystalline sample of a semiconductor material, 5 mm long, 4 mm wide, and 2 mm thick. When a potential difference of 2 volts is applie across its two ends, an electric current of (40 mA )passes through the length of the sample. A magnetic field of 0.1 Tesla was applied perpendicular to the large surface of the sample, generating a Hall yoltage of 15 mV across the width of the sample. Calculate :-

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Chapter11: Magnetic Forces And Fields
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Problem 63AP: An electron of kinetic energy 2000 eV passes between parallel plates that are 1.0 an apart and kept...
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Q\ A crystalline sample of a semiconductor material, 5 mm long, 4 mm
wide, and 2 mm thick. When a potential difference of 2 volts is applied
across its two ends, an electric current of (40 mA )passes through the
length of the sample. A magnetic field of 0.1 Tesla was applied
perpendicular to the large surface of the sample, generating a Hall
voltage of 15 mV across the width of the sample. Calculate :-
a-electrical conductivity, b-density of charge carriers, c- velocity of
movement and Fermi velocity of this semiconducting material
Transcribed Image Text:Q\ A crystalline sample of a semiconductor material, 5 mm long, 4 mm wide, and 2 mm thick. When a potential difference of 2 volts is applied across its two ends, an electric current of (40 mA )passes through the length of the sample. A magnetic field of 0.1 Tesla was applied perpendicular to the large surface of the sample, generating a Hall voltage of 15 mV across the width of the sample. Calculate :- a-electrical conductivity, b-density of charge carriers, c- velocity of movement and Fermi velocity of this semiconducting material
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